2 f w. 20 mitsubishi igbt modules cm50mx-24a high power switching use cm50mx-24a ? i c ..................................................................... 50a ? v ces ......................................................... 1200v ? cib (3-phase converter + 3-phase inverter + brake) ? flatbase type / insulated package / copper base plate ? rohs directive compliant application general purpose inverters, servo amplif iers 53 54 55 56 57 58 59 60 61 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 99 121.7 ?118.1 110 0.5 94.5 ?58.4 0 a 0.8 39 50 0.5 57.5 62 ?4.2 ?15.48 ?11.66 ?4.06 ?13.09 ?16.9 ?15 ?18.8 ?30.24 ?34.04 ?45.48 ?49.28 ?60.72 ?64.52 ?75.96 ?79.76 ?91.2 ?95 0 (7.75) ?28.33 ?32.14 ?66.43 ?70.24 ?81.67 ?85.48 ?89.29 ?93.1 ?96.91 ?15.48 ?19.28 ?30.72 ?34.52 ?47.38 ?51.19 ?26.9 ?23.1 ?38.34 ?34.52 0 0 3.75 4-5.5 mounting holes 20.5 17 13 7 (3) 0.8 3.5 label terminal t = 0.8 section a (7.4) 1.2 1.5 12.5 2.5 4.3 2.1 (3.81) 1.15 0.65 r(1~2) s(5~6) t(9~10) b(24~25) gb(35) n(57~58) n1(60~61) p(52~53) p1(54~55) gun(34) gup(49) eup(48) gvn(33) gvp(44) evp(43) u(13~14) gwn(32) gwp(39) ewp(38) v(17~18) w(21~22) th2(28) th1(29) es(31) ntc * use both terminals (r/s/t/p/n/p1/b/n1/u/v/w) to the external connection. ?pin positions with tolerance 0.5 circuit diagram 5 p m f s b o d f p u i f s x j t f t q f d j g j f e division of dimension 0.5 to 3 over 3 to 6 over 6 to 30 over 30 to 120 over 120 to 400 tolerance 0.2 0.3 0.5 0.8 1.2 outline drawing & circuit diagram dimensions in mm
2 f w. 20 2 mitsubishi igbt modules cm50mx-24a high power switching use absolute maximum ratings (t j = 25 c, unless otherwise specified) inverter part symbol parameter conditions rating unit v ces v ges i c i crm p w r w i e (note.3) i erm(note.3) collector-emitter voltage gate-emitter voltage collector current maximum collector dissipation emitter current (free wheeling diode forward current) g-e short c-e short dc, t c = 97c pulse t c = 25c t c = 25c pulse 1200 20 50 100 355 50 100 v a w a (note. 1) (note. 4) (note. 1, 5) (note. 1) (note. 4) brake part rating unit v ces v ges i c i crm p w r w v rrm(note.3) i f (note.3) i frm(note.3) collector-emitter voltage gate-emitter voltage collector current maximum collector dissipation repetitive peak reverse voltage forward current g-e short c-e short dc, t c = 106c pulse t c = 25c t c = 25c pulse 1200 20 30 60 260 1200 30 60 v a w v a (note. 1) (note. 4) (note. 1, 5) (note. 1) (note. 4) symbol parameter conditions converter part rating unit v rrm e a i o i fsm i 2 t repetitive peak reverse voltage recommended ac input voltage dc output current surge forward current c urrent square time 3-phase full wave rectifying, t c = 1 c the sine half wave 1 cycle peak value, f = 60hz, non-repetitive value for one cycle of surge current 1600 440 50 500 1040 v 9 a a 2 s (note. 1) symbol parameter conditions module rating unit t j t stg v iso o junction temperature storage temperature isolation voltage base plate flatness 0 r x q w l q j w orque weight terminals to base plate, f = 60hz, ac for 1 min 5 0 6 on the centerline x, y mounting m5 screw (typical) ?0 ~ +150 ?0 ~ +125 2500 0 ~ +100 2.5 ~ 3.5 270 c 9 m n? g note. 8: the base plate flatness measurement points are in the following figure. (note. 8) symbol parameter conditions 9 : ) f b u t j o l t j e f ) f b u t j o l t j e f d p o w f y d p o d b w f
jan. 2009 3 mitsubishi igbt modules cm50mx-24a high power switching use electrical characteristics (t j = 25 c, unless otherwise specified) inverter part limits unit min. typ. max. i ces v ge(th) i ges v cesat c ies c oes c res q g t d(on) t r t d(off) t f t rr (note.3) q rr (note.3) v ec(note.3) r th(j-c)q r th(j-c)d u j r g collector cut off current gate-emitter threshold voltage gate h p l w w h u leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance *ate charge turn-on delay time 5 ise time turn-off delay time )all time reverse recovery time reverse recovery charge emitter-collector voltage thermal resistance (junction to case) internal gate resistance external gate resistance v ce = v ces , g-e short i c = 5ma, v ce = 10v v ge = v ges , c-e short i c = 50a, v ge = 15v i c = 50a, v ge = 15v v ce = 10v g-e short v cc = 600v, i c = 50a, v ge = 15v v cc = 600v, i c = 50a v ge = 15v, r g = 6.2 inductive load (i e = 50a) i e = 50a, g-e short i e = 50a, g-e short per 1/6 igbt per 1/6 free wheeling diode t c = 25 c, per switch 7 2.0 2.2 1.9 250 2 2.6 2.16 2.5 0 1 8 0.5 2.6 8.5 0.75 0.17 100 50 300 600 200 3.4 0.35 0.63 62 6 6 ma v a v nf nc ns c v k/w t j = 25c t j = 125c chip (note. 6) (note. 1) (note. 6) t j = 25c t j = 125c chip (note. 6) symbol parameter conditions brake part limits unit min. typ. max. i ces v ge(th) i ges v cesat c ies c oes c res q g i rrm(note.3) v f(note.3) r th(j-c)q r th(j-c)d u j r g collector cut off current gate-emitter threshold voltage gate h p l w w h u leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance *ate charge repetitive peak reverse current forward voltage thermal resistance (junction to case) internal gate resistance external gate resistance v ce = v ces , g-e short i c = 3ma, v ce = 10v v ge = v ges , c-e short i c = 30a, v ge = 15v i c = 30a, v ge = 15v v ce = 10v g-e short v cc = 600v, i c = 30a, v ge = 15v v r = v rrm i f = 30a i f = 30a per igbt per clamp diode t c = 25c 7 2.0 2.2 1.9 150 2.6 2.16 2.5 0 1 8 0.5 2.6 5.1 0.45 0.1 1 3.4 0.48 0.79 100 6 10 ma v a v nf nc ma v k/w t j = 25c t j = 125c chip (note. 6) (note. 1) (note. 6) t j = 25c t j = 125c chip (note. 6) symbol parameter conditions i rrm v f r th(j-c) repetitive peak reverse current forward voltage thermal resistance (junction to case) v r = v rrm , t j = 150c i f = 50a per diode 1.2 6 1.6 0.33 ma v k/w (note. 1) limits unit min. typ. max. symbol parameter conditions converter part
oct. 2011 4 mitsubishi igbt modules cm50mx-24a high power switching use note.1: case temperature (t c ), heat sink temperature (t s ) measured point is just under the chips. (refer to the figure of the chip location.) 2: typical value is measured by using thermally conductive grease of = 0.9w/(m?). 3: i e , i erm , v ec , t rr , q rr and e rr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (fwdi). i f , i frm , v f , v rrm and i rrm represent ratings and characteristics of the clamp diode of brake part. 4: pulse width and repetition rate should be such that the device junction temperature (t j ) dose not exceed tjmax rating. 5: junction temperature (t j ) should not increase beyond 150 c. 6: pulse width and repetition rate should be such as to cause negligible temperature rise. (refer to the figure of the test circuit for v cesat and v ec ) 7: ntc thermistor part limits unit min. typ. max. r25 r/r b (25/50) p 25 zero power resistance deviation of resistance b constant power dissipation t c = 25c t c = 100 c, r 100 = 493 approximate by equation t c = 25c 5.00 3375 5.15 +7.8 10 4.85 ?.3 k % k mw (note. 7) symbol parameter conditions chip location (top view) dimensions in mm (tolerance: 1mm) module r th(c-s) contact thermal resistance (case to heat sink) thermal grease applied per 1 module 0.015 k/w (note. 2) (note. 1) limits unit min. typ. max. symbol parameter conditions 53 54 55 56 57 58 59 60 61 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 (121.7) (110) (50) (62) 0 0 label side 29.7 27.4 28.4 42.0 0 38.8 47.9 63.9 70.4 75.9 85.8 91.3 0 18.6 26.7 (tr/up, tr/vp, tr/wp) 34.9 (di/up, di/vp, di/wp) 35.6 (tr/un, tr/vn, tr/wn) 27.4 (di/br) 27.9 (th) 43.3 97.6 101.2 102.8 26.7 35.8 44.9 62.7 72.1 78.1 83.1 86.5 93.5 99.4 c r r n c s r n c t r n t u r p d u i p d b i r d w i p d v i p t u r n d u i n d w i n d v i n t v r t h p t b r r t w r p t w r n t v r n c r r p c s r p c t r p each mark points the center position of each chip. tr**: igbt, di**: fwdi (dibr: clamp diode), cr**: converter diode, th: ntc t hermistor r 25 : resistance at absolute temperature t 25 [k]; t 25 = 25 [c]+273.15 = 298.15 [k] r 50 : resistance at absolute temperature t 50 [k]; t 50 = 50 [c]+273.15 = 323.15 [k] b (25/50) = in( )/( ) r 25 r 50 1 t 25 1 t 50
oct. 2011 5 mitsubishi igbt modules cm50mx-24a high power switching use t rr, q rr test waveform t i e t rr i rr 1/2 ? i rr q rr = 1/2 ? i rr ? t rr 0a switching time test circuit and waveforms v cc + i c v ce i e arm r g v ge + v ge v ge load 0v v ge v ge i c t d(on) t d(off) t r t f 90% 10% 0v 0a 90% 0% p side inverter part t r (example of u arm) g-e short (gvp-evp, gwp-ewp , gvn-es, gwn-es, gb-es) n side inverter part t r (example of u arm) g-e short (gvp-evp, gwp-ewp , gvn-es, gwn-es, gb-es) b r t r g-e short (gup-eup, gvp-evp , gwp-ewp, gun-es, gvn-es, gwn-es) p side inverter part d i (example of u arm) g-e short (gvp-evp, gwp-ewp , gvn-es, gwn-es, gb-es) n side inverter part d i (example of u arm) g-e short (gvp-evp, gwp-ewp , gvn-es, gwn-es, gb-es) b r d i g-e short (gup-eup, gvp-evp , gwp-ewp, gun-es, gvn-es, gwn-es) i c v ge = 15v p1 u n1 g-e short gup eup gun es v i c v ge = 15v p1 u n1 g-e short gup eup gun es v i c v ge = 15v p1 b n1 gb es v i e g-e short p1 u n1 g-e short gup eup gun es v i e g-e short p1 u n1 g-e short gup eup gun es v i f g-e short p1 b n1 gb es v v ce(sat) test circuit v ec /v f test circuit
oct. 2011 6 performance curves 0 10 20 30 40 50 60 70 80 90 100 10 0 2468 13579 t j = 25c v ge = 20v 15 12 13 11 10 9 4 3.5 2 1.5 3 2.5 1 0.5 0 0 20 40 60 80 100 t j = 25c t j = 125c v ge = 15v 10 0 2 4 6 8 20 6 8 10 12 14 16 18 t j = 25c i c = 100a i c = 50a i c = 20a 0 0.5 1 1.5 2 3 3.5 4 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 10 ? 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 10 2 c ies g-e short c oes c res 10 0 10 1 23 57 10 2 23 57 10 1 10 0 10 2 5 7 10 3 2 3 5 7 2 3 5 7 2 3 t d(off) t d(on) t f t r conditions: v cc = 600v v ge = 15v r g = 6.2 t j = 125c inductive load output characteristics (typical) inverter part collector-emitter saturation voltage characteristics (typical) inverter part 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 t j = 25c t j = 125c collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage v ce(sat) (v) gate-emitter voltage v ge (v) capacitance characteristics (typical) inverter part capacitance (nf) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) inverter part free wheeling diode forward characteristics (typical) inverter part emitter-collector voltage v ec (v) half-bridge switching characteristics (typical) inverter part collector current i c (a) collector-emitter saturation voltage v ce(sat) (v) emitter current i e (a) switching time (ns) 2.5 mitsubishi igbt modules cm50mx-24a high power switching use
oct. 2011 7 10 0 10 0 10 1 57 10 2 23 57 23 conditions: v cc = 600v v ge = 15v i c , i e = 50a t j = 125c inductive load 10 0 10 1 57 10 2 23 57 23 e off e on e rr 10 0 10 1 10 0 10 2 5 7 10 3 2 3 5 7 2 3 5 7 2 3 conditions: v cc = 600v v ge = 15v r g = 6.2 t j = 25c inductive load 10 0 10 1 57 10 2 23 57 23 i rr t rr 10 1 10 0 10 2 5 7 10 3 2 3 5 7 2 3 5 7 2 3 conditions: v cc = 600v v ge = 15v i c = 50a t j = 125c inductive load 10 1 10 0 10 ? conditions: v cc = 600v v ge = 15v r g = 6.2 t j = 125c inductive load 2 3 5 7 2 3 5 7 10 2 10 1 10 0 2 3 5 7 2 3 5 7 10 0 10 1 57 10 2 23 57 23 e off e rr e on t d(off) t d(on) t r t f 0 50 100 150 200 250 300 350 0 5 10 15 20 v cc = 400v v cc = 600v i c = 50a 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 10 ? 23 57 10 ? 23 57 10 ? 23 57 10 ? 23 57 10 0 23 57 10 1 single pulse, t c = 25c inverter igbt part : per unit base = r th(j?) = 0.35k/w inverter fwdi part : per unit base = r th(j?) = 0.63k/w converter-di part : per unit base = r th(j?) = 0.33k/w brake igbt part : per unit base = r th(j?) = 0.48k/w brake clamp-di part : per unit base = r th(j?) = 0.79k/w half-bridge switching characteristics (typical) inverter part switching loss (mj/pulse) gate resistance r g () half-bridge switching characteristics (typical) inverter part switching time (ns) gate resistance r g () half-bridge switching characteristics (typical) inverter part switching loss (mj/pulse) l rr (a), t rr (ns) collector current i c (a) emitter current i e (a) reverse recovery characteristics of free wheeling diode (typical) inverter part emitter current i e (a) gate charge characteristics (typical) inverter part gate-emitter voltage v ge (v) gate charge q g (nc) transient thermal impedance characteristics normalized transient thermal impedance z th(j?) time (s) mitsubishi igbt modules cm50mx-24a high power switching use
oct. 2011 8 10 0 10 1 2 3 5 10 2 7 2 3 5 7 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t j = 25c t j = 125c 10 0 10 1 2 3 5 10 2 7 2 3 5 7 0 0.5 1.0 1.5 2.0 t j = 25c t j = 125c 0 0.5 1 1.5 2 2.5 3 3.5 4 0 10 20 30 40 50 60 v ge = 15v t j = 25c t j = 125c forward current l f (a) collector-emitter saturation voltage characteristics (typical) brake part collector current i c (a) clamp diode forward characteristics (typical) brake part forward current i f (a) forward voltage v f (v) rectifier diode forward characteristics (typical) converter part forward voltage v f (v) collector-emitter saturation voltage v ce(sat) (v) mitsubishi igbt modules cm50mx-24a high power switching use
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